A double barrier memristor device has been developed by the Institute of Electrical Engineering and Information Technology, the University of Kiel which shows a continuous change in resistance when a consecutive write voltage is applied. This device has to be integrated with CMOS neuron to develop potentiation and depression. An integrate & fire neuron chip with spiking circuit has been designed and fabricated in AMS350 nm process. DBMD has been integrated with Neuron ASIC and the measurement shows Long-Term Potentiation (LTP) on hardware level which can be used for a larger network to mimic functionalities of the brain.
|Versandkostenfrei innerhalb Deutschlands|
Wollen auch Sie Ihre Dissertation veröffentlichen?