In this work electron transport through different kinds of single-electron devices in thin silicon-on-insulator (SOI) films has been investigated. In highly doped silicon nanowires single-electron effects due to spontaneous formation of multiple tunnel junctions (MTJ) caused by random dopant fluctuations become visible. Similar effects were found in poly-crystalline silicon nanostructures. In quasi-metallic silicon nanowires metallic Coulomb blockade oscillations have been found. In quantum dots embedded in the inversion channel of a SOI-MOSFET high temperature operation up to 300 K has been observed. Influences of the quantum mechanical confinement are significant in these structures. Suspending highly doped nanostructures phononic effects have been measured due to the suppressed inelastic electron-phonon scattering.
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