Einzelelektronentransport in Silicon-on-Insulator-Nanostrukturen

Armin Tilke

ISBN 978-3-89722-589-3
160 Seiten, Erscheinungsjahr: 2001
Preis: 40.50 €
Abstract: When an electron island is weakly coupled to two leads, single-electron tunneling through the island can be observed. Due to Coulomb repulsion, Coulomb blockade dominates electron transport in such structutes.

In this work electron transport through different kinds of single-electron devices in thin silicon-on-insulator (SOI) films has been investigated. In highly doped silicon nanowires single-electron effects due to spontaneous formation of multiple tunnel junctions (MTJ) caused by random dopant fluctuations become visible. Similar effects were found in poly-crystalline silicon nanostructures. In quasi-metallic silicon nanowires metallic Coulomb blockade oscillations have been found. In quantum dots embedded in the inversion channel of a SOI-MOSFET high temperature operation up to 300 K has been observed. Influences of the quantum mechanical confinement are significant in these structures. Suspending highly doped nanostructures phononic effects have been measured due to the suppressed inelastic electron-phonon scattering.

  • Einzelelektronentransport
  • Einzelelektronentransistor
  • Silicon-on-Insulator


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